AON6524 30v n-channel alphamos general description product summary v ds i d (at v gs =10v) 68a r ds(on) (at v gs =10v) < 5.0m w r ds(on) (at v gs = 4.5v) < 8.5m w application 100% uis tested 100% r g tested symbol v ds v gs v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al v 20 gate-source voltage drain-source voltage 30 g ds top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view v gs i dm i as e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r q jc 100ns 36 v maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.9 55 3.5 w power dissipation a p dsm w t a =70c 35.5 3.6 t a =25c t c =25c 5.7 14 t c =100c power dissipation b p d a t a =25c i dsm a t a =70c i d 68 43 t c =25c t c =100c 170 pulsed drain current c continuous drain current mj a 32 avalanche energy l=0.05mh c avalanche current c 22 continuous drain current 26 27 units junction and storage temperature range -55 to 150 c thermal characteristics parameter typ max v 20 gate-source voltage maximum junction-to-ambient a c/w r q ja 18 40 22 g ds top view 12 3 4 87 6 5 pin1 dfn5x6 top view bottom view rev0: sep 2012 www.aosmd.com page 1 of 6
AON6524 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 3.9 5 t j =125c 5.5 7 6.6 8.5 m w g fs 72 s v sd 0.7 1 v i s 40 a c iss 1080 pf c oss 427 pf c rss 92 pf r g 0.7 1.5 2.3 w q g (10v) 17 23 nc q g (4.5v) 8.1 12 nc q gs 4.2 nc q gd 4 nc t d(on) 6.5 ns t r 4.5 ns t 20 ns v ds =v gs i d =250 m a electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 m a, v gs =0v i dss zero gate voltage drain current m a gate-body leakage current v ds =0v, v gs = 20v dynamic parameters r ds(on) static drain-source on-resistance v gs =10v, i d =20a m w v gs =4.5v, i d =20a forward transconductance v ds =5v, i d =20a diode forward voltage i s =1a,v gs =0v maximum body-diode continuous current input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =10v, v ds =15v, i d =20a total gate charge gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =0.75 w , r =3 w turn-on rise time turn-off delaytime t d(off) 20 ns t f 4.5 ns t rr 12 ns q rr 16.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s r gen =3 w turn-off delaytime turn-off fall time body diode reverse recovery time i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s and the maximum allowed junction temperature o f 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperat ure t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev0: sep 2012 www.aosmd.com page 2 of 6
AON6524 typical electrical and thermal characteristics 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 6v 4.5v 3.5v 10v 40 0 20 40 60 80 100 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 2 4 6 8 10 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 2 4 6 8 10 12 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.0v 4v 6v 4.5v 3.5v 10v rev 0: sep 2012 www.aosmd.com page 3 of 6
AON6524 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =15v i d =20a t j(max) =150 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 40 0 2 4 6 8 10 0 4 8 12 16 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s r q jc =3.5 c/w rev 0: sep 2012 www.aosmd.com page 4 of 6
AON6524 typical electrical and thermal characteristics 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 20 40 60 80 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to-am bient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 20 40 60 80 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to-am bient (note h) t a =25 c r q ja =55 c/w rev 0: sep 2012 www.aosmd.com page 5 of 6
AON6524 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: sep 2012 www.aosmd.com page 6 of 6
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